發明提出一種具有虛閘結構的基體觸發之ESD防護元件。該ESD防護元件包含有一雙極性接面電晶體(bipolar junction transistor，BJT)、一觸發電流供應區以及一假閘結構(dummy gate)。該BJT具有一集極摻雜區。該假閘結構具有一多晶矽閘，鄰接於該觸發電流供應區與該集極摻雜區。該BJT的射極係偶合至一電源線，該集極係偶合至一接合焊墊，該觸發電流供應區係偶合至一ESD偵測電路。於一正常操作時，該ESD偵測電路係使該BJT的基極偶接至該電源線。於一ESD事件發生於該接合焊墊與該電源線之間時，該ESD偵測電路係提供一觸發電流至該觸發電流供應區，以觸發該BJT，進而釋放ESD電流。A substrate-triggered ESD protection component having dummy gate structures. The ESD protection component includes a bipolar junction transistor (BJT), a substrate-triggering region to provide triggering current and a dummy gate structure. The BJT comprises a collector. The dummy gate structure has a poly-silicon gate adjacent to the collector and the substrate-triggering region. The emitter of the BJT is coupled to a power line, the collector is coupled to a pad, and the substrate-triggering region is coupled to an ESD detection circuit. During normal circuit operations, a base of the BJT is coupled with the power line through the ESD detection circuit to keep the BJT off. When an ESD event occurs between the pad and the power line, a triggering current is provided to the substrate-triggering region by the ESD detection circuit to trigger on the BJT and release ESD current.
發明提出一種具有虛閘結構的基體觸發之ESD防護元件。該ESD防護元件包含有一雙極性接面電晶體(bipolar junction transistor，BJT)、一觸發電流供應區以及一假閘結構(dummy gate)。該BJT具有一集極摻雜區。該假閘結構具有一多晶矽閘，鄰接於該觸發電流供應區與該集極摻雜區。該BJT的射極係偶合至一電源線，該集極係偶合至一接合焊墊，該觸發電流供應區係偶合至一ESD偵測電路。於一正常操作時，該ESD偵測電路係使該BJT的基極偶接至該電源線。於一ESD事件發生於該接合焊墊與該電源線之間時，該ESD偵測電路係提供一觸發電流至該觸發電流供應區，以觸發該BJT，進而釋放ESD電流。A substrate-triggered ESD protection component having dummy gate structures. The ESD protection component includes a bipolar junction transistor (BJT), a substrate-triggering region to provide triggering current and a dummy gate structure. The BJT comprises a collector. The dummy gate structure has a poly-silicon gate adjacent to the collector and the substrate-triggering region. The emitter of the BJT is coupled to a power line, the collector is coupled to a pad, and the substrate-triggering region is coupled to an ESD detection circuit. During normal circuit operations, a base of the BJT is coupled with the power line through the ESD detection circuit to keep the BJT off. When an ESD event occurs between the pad and the power line, a triggering current is provided to the substrate-triggering region by the ESD detection circuit to trigger on the BJT and release ESD current.