製作奈米碳管發射源之方法
- 經濟部產業技術司–專利資料集 @ 經濟部
專利名稱-中文製作奈米碳管發射源之方法的核准國家是美國, 執行單位是工研院顯示中心, 產出年度是97, 專利性質是發明, 計畫名稱是新世代捲軸軟性顯示關鍵技術發展計畫, 專利發明人是趙慶勳 許志榮 江良祐 張悠揚 李正中, 證書號碼是7,413,763.
| 序號 | 4166 |
| 產出年度 | 97 |
| 領域別 | (空) |
| 專利名稱-中文 | 製作奈米碳管發射源之方法 |
| 執行單位 | 工研院顯示中心 |
| 產出單位 | (空) |
| 計畫名稱 | 新世代捲軸軟性顯示關鍵技術發展計畫 |
| 專利發明人 | 趙慶勳 許志榮 江良祐 張悠揚 李正中 |
| 核准國家 | 美國 |
| 獲證日期 | (空) |
| 證書號碼 | 7,413,763 |
| 專利期間起 | (空) |
| 專利期間訖 | (空) |
| 專利性質 | 發明 |
| 技術摘要-中文 | 一種利用轉寫壓印方法奈米碳管場發射源之方法，至少包含以下步驟:首先網印陰極線於一基板上。接著，形成介電層於陰極線及基板上。隨後，再網印閘極線於介電層上。緊跟著在施以微影及蝕刻技術蝕刻位於閘極線與陰極線的交會處的介電層。之後，再以壓印模具沾粘奈米碳管漿料，以壓印的方法將奈米碳管漿料塗佈於開口內的陰極線上。利用本發明可以有效的控制場發射電子源和閘極的距離，且場發射電子源的形狀都可以得到控制，因此不但可以減少閘極與陰極短路的問題，且可以更有效的提高有效奈米碳管數目及密度，進而提升場發射之電流密度而增進顯示器的均勻度及亮度。最後，再施以照光或退火加熱以除去奈米碳管漿料內的有機物及粘著層。 A method of transferring imprint carbon nano-tube (CNT) field emitting source is disclosed. Firstly, cathode lines are screen printed on a substrate. Then a dielectric layer formation on the cathode lines and substrate is followed. Afterward, gate lines formed on the dielectric layer by screen printing are performed. Next a patterning process is carried out to form openings. Subsequently, an imprint negative mold is dipped with CNT paste and imprinted the CNT paste on the cathode lines through the openings. After drawing of pattern from the imprint mold, the CNT paste is cured by annealing. Since the emitting sources are formed through the imprint negative mold, as a result, the size and shape can be predetermined. Moreover, the intervals between gate line and the emitting source are readily control, which resolve the circuit short problem between gate and cathode. Consequently, the current density, brightness, and uniformity of the emitter sources are significantly improved. |
| 技術摘要-英文 | (空) |
| 聯絡人員 | 李露蘋 |
| 電話 | 03-59117812 |
| 傳真 | 03-5917431 |
| 電子信箱 | oralp@itri.org.tw |
| 參考網址 | http://www.patentportfolio.itri.org.tw |
| 備註 | 0 |
| 特殊情形 | (空) |
| 同步更新日期 | 2019-07-24 |
序號4166 |
產出年度97 |
領域別(空) |
專利名稱-中文製作奈米碳管發射源之方法 |
執行單位工研院顯示中心 |
產出單位(空) |
計畫名稱新世代捲軸軟性顯示關鍵技術發展計畫 |
專利發明人趙慶勳 許志榮 江良祐 張悠揚 李正中 |
核准國家美國 |
獲證日期(空) |
證書號碼7,413,763 |
專利期間起(空) |
專利期間訖(空) |
專利性質發明 |
技術摘要-中文一種利用轉寫壓印方法奈米碳管場發射源之方法，至少包含以下步驟:首先網印陰極線於一基板上。接著，形成介電層於陰極線及基板上。隨後，再網印閘極線於介電層上。緊跟著在施以微影及蝕刻技術蝕刻位於閘極線與陰極線的交會處的介電層。之後，再以壓印模具沾粘奈米碳管漿料，以壓印的方法將奈米碳管漿料塗佈於開口內的陰極線上。利用本發明可以有效的控制場發射電子源和閘極的距離，且場發射電子源的形狀都可以得到控制，因此不但可以減少閘極與陰極短路的問題，且可以更有效的提高有效奈米碳管數目及密度，進而提升場發射之電流密度而增進顯示器的均勻度及亮度。最後，再施以照光或退火加熱以除去奈米碳管漿料內的有機物及粘著層。 A method of transferring imprint carbon nano-tube (CNT) field emitting source is disclosed. Firstly, cathode lines are screen printed on a substrate. Then a dielectric layer formation on the cathode lines and substrate is followed. Afterward, gate lines formed on the dielectric layer by screen printing are performed. Next a patterning process is carried out to form openings. Subsequently, an imprint negative mold is dipped with CNT paste and imprinted the CNT paste on the cathode lines through the openings. After drawing of pattern from the imprint mold, the CNT paste is cured by annealing. Since the emitting sources are formed through the imprint negative mold, as a result, the size and shape can be predetermined. Moreover, the intervals between gate line and the emitting source are readily control, which resolve the circuit short problem between gate and cathode. Consequently, the current density, brightness, and uniformity of the emitter sources are significantly improved. |
技術摘要-英文(空) |
聯絡人員李露蘋 |
電話03-59117812 |
傳真03-5917431 |
電子信箱oralp@itri.org.tw |
參考網址http://www.patentportfolio.itri.org.tw |
備註0 |
特殊情形(空) |
同步更新日期2019-07-24 |