一種圓形光束邊射型雷射，係以含稀微氮化物之低載子遷移率化合物半導體材料作為磊晶結構之發光層，由於低載子遷移率材料可大幅抑制載子的表面復合，於基板表面建立之磊晶結構，由下而上依序堆疊下包覆層、下光波導層、發光層、上光波導層、上包覆層及電極接觸層，發光層係由稀微氮化物材料所形成，並且由磊晶結構表面蝕刻至穿過發光層，以形成發光層與空氣介面具有高折射率差異的脊狀波導。 The invention provides a edge emitting laser with circular beam. It uses a low-carrier-mobility semiconductor compound for the light-emitting layer. The low-carrier-mobility material can greatly suppress surface recombination of the carriers. Therefore, one can form a ridge waveguide by simply etching through the light-emitting layer without the step of epitaxy growth. The invention thus provides a low-cost, high-efficiency edge emitting laser with circular beam. The invention uses a low-carrier-mobility material to form the light-emitting layer of the edge emitting laser with circular beam. It is formed by establishing an epitaxy structure of a substrate surface. It includes, stacked from bottom to top, a bottom cladding layer, a bottom waveguide layer, a light-emitting layer, an upper waveguide layer, an upper cladding layer, and an electrode contact layer. The light-emitting layer is formed using a low-carrier-mobility material with diluted nitrides. Etching starts from the surface of the epitaxy structure through the light-emitting layer, forming the ridge waveguide. Since the low-carrier-mobility material can suppress surface recombination of carriers, there is no need for the epitaxy growth of a low-reflective-index semiconductor material on the sides of the ridge waveguide. The re
一種圓形光束邊射型雷射，係以含稀微氮化物之低載子遷移率化合物半導體材料作為磊晶結構之發光層，由於低載子遷移率材料可大幅抑制載子的表面復合，於基板表面建立之磊晶結構，由下而上依序堆疊下包覆層、下光波導層、發光層、上光波導層、上包覆層及電極接觸層，發光層係由稀微氮化物材料所形成，並且由磊晶結構表面蝕刻至穿過發光層，以形成發光層與空氣介面具有高折射率差異的脊狀波導。 The invention provides a edge emitting laser with circular beam. It uses a low-carrier-mobility semiconductor compound for the light-emitting layer. The low-carrier-mobility material can greatly suppress surface recombination of the carriers. Therefore, one can form a ridge waveguide by simply etching through the light-emitting layer without the step of epitaxy growth. The invention thus provides a low-cost, high-efficiency edge emitting laser with circular beam. The invention uses a low-carrier-mobility material to form the light-emitting layer of the edge emitting laser with circular beam. It is formed by establishing an epitaxy structure of a substrate surface. It includes, stacked from bottom to top, a bottom cladding layer, a bottom waveguide layer, a light-emitting layer, an upper waveguide layer, an upper cladding layer, and an electrode contact layer. The light-emitting layer is formed using a low-carrier-mobility material with diluted nitrides. Etching starts from the surface of the epitaxy structure through the light-emitting layer, forming the ridge waveguide. Since the low-carrier-mobility material can suppress surface recombination of carriers, there is no need for the epitaxy growth of a low-reflective-index semiconductor material on the sides of the ridge waveguide. The re