發光二極體封裝結構及其製作方法
- 經濟部產業技術司–專利資料集 @ 經濟部
專利名稱-中文發光二極體封裝結構及其製作方法的核准國家是韓國, 執行單位是工研院電光所, 產出年度是97, 專利性質是發明, 計畫名稱是高效能半導體光源及應用技術計畫, 專利發明人是陳明鴻 溫士逸 郭武政 陳炳儒 翁瑞坪 李孝文, 證書號碼是10-0766028.
| 序號 | 4283 |
| 產出年度 | 97 |
| 領域別 | (空) |
| 專利名稱-中文 | 發光二極體封裝結構及其製作方法 |
| 執行單位 | 工研院電光所 |
| 產出單位 | (空) |
| 計畫名稱 | 高效能半導體光源及應用技術計畫 |
| 專利發明人 | 陳明鴻 溫士逸 郭武政 陳炳儒 翁瑞坪 李孝文 |
| 核准國家 | 韓國 |
| 獲證日期 | (空) |
| 證書號碼 | 10-0766028 |
| 專利期間起 | (空) |
| 專利期間訖 | (空) |
| 專利性質 | 發明 |
| 技術摘要-中文 | 一種發光二極體封裝結構及其製作方法，乃利用由兩層矽基材間夾有絕緣層之絕緣矽（silicon-on-insulator, SOI）作為封裝基板，然後，於絕緣矽基板之兩層矽基材上分別製作凹槽反射座與可將絕緣矽基板分割出正負電極之隔絕槽，再製作數個金屬導線電性連接前述兩層矽基材，即可將發光二極體晶粒配置於凹槽反射座上並透過金屬導線而電性連接至絕緣矽基板之正負電極，藉此可達成發光二極體的封裝作業，並提高耐溫性、散熱性，以及簡化製程。 One objective of the invention is to provide a light emitting diode (LED) package and process of making the same, which uses silicon-on-insulator (SOI) as the substrate and forms a reflective cavity on the silicon-on-insulator (SOI) substrate to dispose an LED. Insulation can be done by the insulation layer on the SOI substrate. Therefore, there is no need for further furnace processes to grow an insulation layer. Thus, the advantages of good heat resistance, ease in manufacturing the reflective cavity, good heat dispersal and easier processing can be achieved. In order to achieve the above objective, a process of making a light emitting diode (LED) package is disclosed. First, a silicon-on-insulator (SOI) substrate is provided. The silicon-on-insulator substrate is composed of a first silicon based material, a second silicon based material, and an insulation layer that is interposed therebetween. The first silicon based material and the second silicon based material of the silicon-on-insulator substrate are then etched to form a reflective cavity and an insulation trench, respectively. The insulation trench divides the silicon-on-insulator substrate into contact surfaces of positive and negative electrodes. Pluralities of metal lines are then formed on the sili |
| 技術摘要-英文 | (空) |
| 聯絡人員 | 李露蘋 |
| 電話 | 03-59117812 |
| 傳真 | 03-5917431 |
| 電子信箱 | oralp@itri.org.tw |
| 參考網址 | http://www.patentportfolio.itri.org.tw |
| 備註 | 0 |
| 特殊情形 | (空) |
| 同步更新日期 | 2023-07-05 |
序號4283 |
產出年度97 |
領域別(空) |
專利名稱-中文發光二極體封裝結構及其製作方法 |
執行單位工研院電光所 |
產出單位(空) |
計畫名稱高效能半導體光源及應用技術計畫 |
專利發明人陳明鴻 溫士逸 郭武政 陳炳儒 翁瑞坪 李孝文 |
核准國家韓國 |
獲證日期(空) |
證書號碼10-0766028 |
專利期間起(空) |
專利期間訖(空) |
專利性質發明 |
技術摘要-中文一種發光二極體封裝結構及其製作方法，乃利用由兩層矽基材間夾有絕緣層之絕緣矽（silicon-on-insulator, SOI）作為封裝基板，然後，於絕緣矽基板之兩層矽基材上分別製作凹槽反射座與可將絕緣矽基板分割出正負電極之隔絕槽，再製作數個金屬導線電性連接前述兩層矽基材，即可將發光二極體晶粒配置於凹槽反射座上並透過金屬導線而電性連接至絕緣矽基板之正負電極，藉此可達成發光二極體的封裝作業，並提高耐溫性、散熱性，以及簡化製程。 One objective of the invention is to provide a light emitting diode (LED) package and process of making the same, which uses silicon-on-insulator (SOI) as the substrate and forms a reflective cavity on the silicon-on-insulator (SOI) substrate to dispose an LED. Insulation can be done by the insulation layer on the SOI substrate. Therefore, there is no need for further furnace processes to grow an insulation layer. Thus, the advantages of good heat resistance, ease in manufacturing the reflective cavity, good heat dispersal and easier processing can be achieved. In order to achieve the above objective, a process of making a light emitting diode (LED) package is disclosed. First, a silicon-on-insulator (SOI) substrate is provided. The silicon-on-insulator substrate is composed of a first silicon based material, a second silicon based material, and an insulation layer that is interposed therebetween. The first silicon based material and the second silicon based material of the silicon-on-insulator substrate are then etched to form a reflective cavity and an insulation trench, respectively. The insulation trench divides the silicon-on-insulator substrate into contact surfaces of positive and negative electrodes. Pluralities of metal lines are then formed on the sili |
技術摘要-英文(空) |
聯絡人員李露蘋 |
電話03-59117812 |
傳真03-5917431 |
電子信箱oralp@itri.org.tw |
參考網址http://www.patentportfolio.itri.org.tw |
備註0 |
特殊情形(空) |
同步更新日期2023-07-05 |